Photoemission study of energy-band alignment for RuOx/HfO2/Si system
نویسندگان
چکیده
Conductive oxides RuOx as alternative electrode on high-k HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx /HfO2/Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valenceand conduction-band offsets of HfO2/Si are determined to be 3.05±0.1 and 1.48±0.1 eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95–2.73 eV. © 2004 American Institute of Physics. [DOI: 10.1063/1.1839287]
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